Abstract
Copper indium gallium and di-selenium (CIGS) films have been successfully deposited by the electrodeposition technique. The as-deposited films were annealed at 450°C for 40 min. The (CdS) and cadmium–zinc sulfide (CdZnS) used as buffer and window layer, respectively, were synthesized by the chemical bath deposition technique. The prepared samples were characterized for structure by x-ray diffraction. The morphology of the deposited films was analyzed by scanning electron microscopy. Atomic force microscopy and UV–Vis spectroscopy were used for surface roughness and optical properties. A typical solar cell structure consists of CdZnS–CdS and CIGS–Mo as window, buffer and absorber layer, respectively. The device performance was measured under AM 1.5 global spectrum for 1000 W/m2 irradiance, where the obtained efficiencies were in the range of 2–3%. Open-circuit voltage was 345 mV, short circuit current was 16.8 mA/cm2 and the fill factor was 38.18%.
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