Abstract
Ni-doped SrTi0.75Sn0.25O3 (STS) thin films have been successfully prepared for the resistive random access memory (RRAM) cells in TiN (top electrode)/STS/ (bottom) Pt and TiN/STS/LNO sandwich structures, respectively. The reproducible resistive switching (RS) characteristics of the two types of structures are studied systematically for RRAM applications. The former structure shows a filament type of RS behaviors mainly controlled by the top interface between the TiN and STS films. On the contrary, the latter structure presents a Schottky-like barrier modulation type of RS behaviors mainly confined at the bottom interface layers between STS and LNO films. Both of the two types of RS behaviors can be attributed to the movement of the oxygen vacancies in the STS films under external voltage.
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