Abstract
The effect of the catalytic metal gate structure on the selectivity of MOS gas sensors has been described. It has been shown that hydrogen cyclic treatment (HCT) modifies the structure of the palladium film evaporated on the silicon dioxide. Pore formation in the gate gives rise to the ammonia and carbon monoxide sensitivity of the field-effect sensor. Ammonia adsorption and desorption processes on the sensor surface have been investigated. These processes are of a unimolecular nature with an adsorption activation energy of 0.08±0.02 eV/molecule in an inert atmosphere.
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