Abstract
Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.
Highlights
Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies
We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates
Quantum electronic devices in Si and all other semiconductors, regularly require extensive optimization of the gate voltages that control the device, in order to compensate for a disordered potential-energy landscape that is usually assumed to derive from unintentional background doping or fixed charge in oxide layers
Summary
Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies.
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