Abstract
The nanoscale electrical properties of chemical-solution-deposition (CSD)-derived BiFeO3 grown on pulsed-laser-ablated La0.67Sr0.33MnO3//SrTiO3 (001) thin film heterostructures are investigated using a host of scanning probe microscopy techniques, including electrostatic force microscopy (EFM), scanning Kelvin probe microscopy (SKPM), piezoresponse force microscopy (PFM), and conductive AFM (CAFM). EFM and SKPM confirm the p-type nature of the CSD-derived BFO thin films as well as charge accumulation at the film surface after electrical bias. For BiFeO3 films of a fixed thickness (∼35 nm), the local current–voltage (I–V) behavior obtained by CAFM is strongly dependent on the La0.67Sr0.33MnO3 bottom electrode thickness. BiFeO3 films on a 20 nm thick La0.67Sr0.33MnO3 demonstrate the typical switchable diode behavior governed by polarization orientation. However, when the thickness of La0.67Sr0.33MnO3 is reduced to less than 5 nm, the BiFeO3 films show only forward diode behaviors regardless of polarization ...
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