Abstract

Electrochemical atomic layer deposition (E-ALD) is a method deeply developed and furthered by the research of Dr. John Stickney. This talk will focus on a brief summary of his past research as well as present work conducted in this lab. E-ALD is a method where one component is deposited followed by another, keeping the conditions simple by operating at room temperature and using a three electrode flow cell.1 This type of deposition process adds control to the compound growth by limiting the amount of deposit to less than a monolayer per deposition cycle. A brief overview of the history of advances made in E-ALD will be given, leading into different materials that have been developed. Development of various CdTe deposition techniques will be discussed as well as the investigations into the deposition of germanene.2-4 Finally new work on GeSe will be discussed. Investigations into the effect of pH on the electrochemical deposition of Ge and Se were done. Deposition studies of Ge on Se-coated Au electrodes were carried out as well as Se on Ge-coated Au electrodes at different pHs in an effort to find conditions where a GeSe thin film can be deposited. References Stickney, J. L.; Villegas, I.; Suggs, D. W.; Gregory, B. W., Electrochemical Atomic Layer Epitaxy (ECALE). Abstr Pap Am Chem S 1991, 201, 289­Coll.Zhang, X.; Shen, S.; Howell, P.; Cheng, W.; Mubeen, S.; Stickney, J. L., Journal of The Electrochemical Society , 166 (5) H3249-H3256 (2019) ACS Nano2017, 11, 9, 9481-948 Journal of The Electrochemical Society, 164 (7) D469-D477 (2017)

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call