Electrochemistry and MO Computations of Saturated and Unsaturated N-Heterocyclic Silylenes

Abstract

The results of electrochemical investigations by cyclic voltammetry and density functional computations of new saturated (2, 3) and unsaturated N-heterocyclic silylenes (5, 6) are described and compared with the previously known N-heterocyclic silylenes (1, 4). Good correlations have been found between experimental oxidation potentials of saturated 1−3 and unsaturated 4−6 with those of density functional calculations of the electronic properties of these divalent silicon derivatives.