Abstract
Thin films ofbismuth telluride grown by electrochemical deposition technique on conducting glass and Mo sheet substrates, were characterized for their structural, morphological, optical and compositional analysis. These studies revealed polycrystalline anisotropic and layered structure ofthese films with different compositional stoichiometry. In the present work electrochemical deposition ofbismuth telluride thin films is studied as a dopant material in II–VI group absorber materials f or photovoltaic application since it has a narrow optical energy band gap of0.13 eV. In this deposition process different film growth parameters were optimized to get good quality ofcompositionally uniform bismuth telluride thin film. XRD analysis revealed a hexagonal symmetry with large c-axis lattice constants (Bi2Te3 ,B i 2þX Te3� X ). 2002 Elsevier Science B.V. All rights reserved.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
