Abstract
Oxygen vacancies(OVs) can greatly influence the properties of luminescent materials, however, finding a facile way of controlling the specific defect remains challenging. The traditional methods usually require either high temperature or long period of time. Here, we demonstrate an electrochemical strategy to implant OVs in as serious of oxides including Li2GeZnO4(LZGO), Li2GeZnO4:Mn2+(LZGO:Mn) and LiGa5O8:Cr3+(LGO:Cr). The photoluminescence intensity of all these oxides is increased by 43%, 36% and 38% respectively. Our electrochemical strategy not only exhibits facile advantage in tuning the OVs in the lattice of luminescent material, but also provides a method with general efficacy which should be benificial for many other correlated applications.
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