Abstract
Potentio-dynamic polarization, electrochemical impedance spectroscopy (EIS), and galvanic current techniques were used to study the electrochemical behaviors of copper and tantalum in chemical mechanical polishing (CMP) slurries. It was found that a chemical agent, guanidine chloride, had a significantly specific effect in etching tantalum. When tantalum was galvanically coupled to copper in a commercial CMP slurry, tantalum was preferentially corroded and copper was protected from corrosion.
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