Abstract
In this communication, we propose a novel method to electrochemically modify hydrogen-terminated diamond surface in MISFETs with LiF dielectric at room temperature. The chemical reaction is 2F- + C–H+2h+→C–F + HF. According to measurement results of X-ray photoelectron spectroscopy on diamond, C–F bonds were produced after electrochemistry modification. A model was proposed to explain the electrochemistry modification on MISFETs. In this model, the theoretical electrolysis voltage of F− was calculated to be −3.8V, which was consistent with the experimental value of -5V.
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