Abstract
Abstract NO was efficiently reduced on ZnO and In2O3 of n-type semiconductor electrodes in aqueous solutions. Harmless N2 was obtained as a main reduction product. Current-potential curves on the ZnO and In2O3 electrodes under NO were quite similar to those under N2O. It is proposed that the NO reduction on the ZnO and In2O3 electrodes proceeds via the redox mechanism in which oxygen vacancies formed by the electrochemical reduction on the electrode surface play an important role.
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