Abstract
Silicon nanowires (SiNWs) were produced by the electrochemical reduction of porous NiO/SiO2 blocks ([SiO2]/[NiO]=10M ratio) in molten CaCl2 at 1173K for the first time. NiO additives seed the growth of straight SiNWs. The produced SiNWs have diameter distributions ranging from 60 to 330nm and outer amorphous layers with thickness about 2.5–3.1nm. The length of the nanowire can be as long as 30µm. The high length-to-diameter suggests that silicon is incorporated through the tip of the nanowire. Nano-sized nickel silicide particles are observed in the body of a zigzag SiNW. The results indicate that the electrochemical reduction process has the potential to produce nano-sized Si-based composite and metal silicide.
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