Abstract
To investigate the influence of Zn doping on the electrochemical properties of Co3O4 thin films, an FTO film was first spray-deposited onto a glass substrate. Then, undoped and 2, 4, 6, 10 at.% of Zn-doped Co3O4 thin films were spray-deposited onto the FTO thin films. The areal capacitance was calculated using the inner surface area of the cyclic voltammetry curves. The highest value of areal capacitance was found to be 5.37 mF/cm2 belonging to the 6 at.% Zn-doped Co3O4 film. The equivalent series resistance, internal resistance, and equivalent distribution resistance of the prepared cells were estimated from the Nyquist plot.
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