Abstract
Self-assembled monolayers of octadecylthiol (ODT) were reconstituted on freshly etched gallium arsenide (n-GaAs) for the electrochemical stabilization against decomposition of the surfaces (passivation) in aqueous buffers. The surface composition was evaluated by x-ray photoelectron spectroscopy to optimize the surface treatment before ODT deposition. Electrochemical properties of the monolayers were monitored by cyclic voltammetry and impedance spectroscopy. The impedance spectrum of the photoetched n-GaAs after the deposition of the ODT monolayer was stable in an aqueous electrolyte at pH=7.5 for more than 24 h within the sensitivity of our experimental technique. The effective passivation of GaAs surfaces is an essential step towards biosensor applications.
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