Electrochemical Modeling of the Effects of F Ions in the AlGaN Layer on the Two-Dimensional Electron Density in AlGaN/GaN HEMTs

Abstract

Based on electrochemical principles, a new physical model of the F ions in the AlGaN layer on the two-dimensional electron gas of GaN transistors is proposed. The two-dimensional electron gas affected by the F ions in the AlGaN layer calculated by the proposed model can explain those experimental observations reported in the literature. According to the proposed model, the two-dimensional electron gas could physically origins from the electromotive force in the solid electrolyte-the AlGaN layer. The proposed model predicates howthe width of the compact layer, the temperature, the degree of ionization and F ions in the AlGaN layer impacts on the two-dimensional electron gas that still remains to be unraveled. The proposed modelgives a physical understanding ofhow F ions impacts on the performance of GaN-based transistors and supplies a possibility to improve their performance.