Abstract
Organic memristive devices are promising candidates for wearable neuromorphic in-memory computing systems owing to their easiness of fabrication, bio-compatibility, and energy efficiency. Among various organic materials used as the resistive switching layer of memristive devices, polydimethylsiloxane (PDMS) is a stable, hydrophobic, and bio-compatible material and is not much explored. PDMS composite with low-cost graphite as filler material possesses the advantage of easy tuning of the electrical property of the dielectric layer. In this work, PDMS-graphite composite-based memristors with different top electrode materials were studied to identify the mechanism of resistive switching. Electrochemically active materials like copper and silver and electrochemically inert gold were used as the top electrode. Resistive switching was observed only in copper and silver top electrode devices which substantiates the electrochemical metallization (ECM) type switching. The resistive switching devices also possess synapse-like plasticity and paired-pulse facilitation behavior and have potential applications in neuromorphic computing.
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