Abstract
In this study, ZnSe semiconductor thin film was attained using the electrodeposition (ECD) method. ZnSe thin films were grown on ITO (indium tin oxide) and p-Si substrates using zinc perchlorate (Zn(ClO4)2), selenic acid (H2SeO3) and selenium dioxide (SeO2) compounds. ZnSe thin films grown with the ECD method were produced by applying −0.6 V potential value on ITO for one hour and −1.4 V potential value on p-Si for the same period. The structural properties and optical characteristics of the grown samples were examined with the help of x-ray diffraction and absorption spectrums. The current-voltage (I-V) characteristics of the n-ZnSe/p-Si heterojunction were examined, and the rectification behavior was observed. Ideality factor, operation voltage, barrier height and reverse-bias saturation current were calculated from the current-voltage graphics. The ideality factor was calculated as 1.76, operation voltage as 0.201 V, barrier height as 0.654 eV and reverse-bias saturation current as 2.407 × 10−8 mA.
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