Abstract
InSb nanowires with high crystalline properties are synthesized with a diameter of 200 nm via direct current electrodeposition method inside the nanochannels of anodic alumina membranes. For the first time, the characteristics of field effect transistors based on InSb nanowires synthesized via electrochemistry is presented. A single InSb nanowire is used as a channel with gold source and drain contacts. A P ++ silicon substrate is used as the back-gate contact. Both nanowire synthesis and device fabrication are performed at room temperature and nanowire hole mobility is measured to be 57 cm 2 V -1 S -1 suggesting high structural quality of the as-grown InSb nanowires.
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