Abstract
AbstractIn this paper, we report the electrochemical formation of the InP porous nanostructures and their feasibility for the application to the amperometric chemical sensors. Our two step electrochemical process consists of the pore formation on a (001) n‐type InP substrate and the subsequent etching of pore walls caused by changing the polarity of the InP electrode in a HCl‐based electrolyte. By applying the anodic bias to the InP electrode, the high‐density array of uniform nanopores was formed on the surface. Next, the cathodic bias was applied to the porous sample to reduce the wall thickness by cathodic decomposition of InP, where the thickness of InP nanowall decreased uniformly along the entire depth of the porous layer. From the amperometric measurements of the porous electrode, it was found that the electrocatalytic activity was much higher than that of the planar electrode. Furthermore, the current sensitivity for the H2O2 detection was much enhanced after the cathodic decomposition process. The InP porous nanostructure formed by the present process is one of the promising structures for the application to the semiconductor‐based bio/chemical sensors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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