Abstract
The electrochemical, optical and magnetic properties in poly(arylene vinylene) such as poly(1,4-naphthalene vinylene), PNV, during electrochemical n-type doping have been investigated. These results are discussed in terms of polaron and/or bipolaron models and lead to a better understanding of the electronic levels. Especially, the evolution of localized states upon doping is dependent on molecular structure and successful n-type doping in PNV is suggested. Furthermore, we have investigated the fabrication and the characterization of metal-semiconductor field effect transistors utilizing poly(arylene vinylene) and the doping-undoping behavior of poly(arylene vinylene) for battery application. New optical recording techniques utilizing the precursor films of poly(arylene vinylene) have also been proposed.
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