Abstract

Triangulation of the Ag–Hg–Ge–Se system in the vicinity of GeSe2, HgSe, Hg2GeSe3, Hg2GeSe4, Ag2Hg3GeSe6, and Ag1.4Hg1.3GeSe6 compounds and selenium was performed using X-ray diffraction and differential thermal analysis methods. The spatial position of the determined four-phase regions regarding figurative point of silver was used to write the equations of virtual potential-forming chemical reactions. Potential-forming processes were performed in electrochemical cells (ECCs) of the type (−) C | Ag | Ag3GeS3I glass | D | C (+) where C are the inert (graphite) electrodes, Ag and D are the electrodes of the ECCs, D represents equilibrium four-phase alloys, and Ag3GeS3I glass is a membrane with purely ionic Ag+ conductivity. The linear dependences of the EMF of galvanic cells on temperature in the range of 425–455 K were used to calculate the standard thermodynamic values of saturated solid solutions of Hg2GeSe3, Hg2GeSe4, Ag2Hg3GeSe6, and Ag1.4Hg1.3GeSe6 compounds.

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