Abstract
Iron sulfide thin films were fabricated by the electrochemical deposition method from an aqueous solution containing FeSO4 and Na2S2O3. The composition ratio obtained was Fe:S:O = 36:56:8. In the photoelectrochemical measurement, a weak negative photo-current was observed for the iron sulfide films, which indicates that its conduction type is p-type. No peaks were observed in X-ray diffraction pattern, and thus the deposited films were considered to be amorphous. For a heterojunction with ZnO, rectification properties were confirmed in the current-voltage characteristics. Moreover, the current was clearly enhanced under AM1.5 illumination.
Highlights
Thin films were fabricated by sulfurization of iron films,[4,5,6] metal organic chemical vapour deposition,[7,8,9,10] low pressure chemical vapor deposition,[11] spray pyrolysis,[12] sulfurization of electrochemically deposited Fe-S films,[13] solution-phase deposition of an iron molecular ink followed by sequential annealing in air, H2S, and sulfur gas,[14] and laser annealing of a multiphase iron sulfide film.[15]
There is no report of successful fabrication of a heterojunction solar cell based on FeS2
For successful fabrication of diodes based on iron sulfide, we must completely remove those secondary phases
Summary
Electrochemical deposition of iron sulfide thin films and heterojunction diodes with zinc oxide One possible reason for the failure is that FeS2 films and crystals grown by conventional methods include Fe-S phases other than pyrite, such as marcasite and mono sulfide. Iron sulfide thin films were deposited using the electrochemical deposition (ECD)
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