Electrochemical CV‐profiling of GaN

Abstract

A Schottky-like contact is formed by electrolyte, wetting the area of the semiconductor surface delimited by a sealing ring. In reverse bias with common CV technique the concentration of donors and acceptors can be evaluated. Using a newly developed etch procedure, which we call “cyclic oxidation”, n- and p-type nitrides can be etched (photo-)electrochemically (PEC) to yield reproducibly etched surfaces with mirror-like surface morphology at high etch rates (∼3 μm/h). Using this new etch procedure, various MOVPE and HVPE grown samples have been characterized by ECV profiling. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)