Abstract
The study focused on the effect of cooling rate on the behaviour of oxide layers formed on silicon (Si) electrodes in 3% Sodium Chloride. All analysis conducted by electrochemical and spectral techniques confirmed that the stability of the silicon oxide film is influenced by the cooling kinetic used in the manufacturing process of Si material. The electronic structure model studied by Mott-Schottky measurements describes the passive film as a hetero-junction (p-n) composed of a metal/Si oxides interface and Si hydroxides/electrolyte interface.
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