Abstract
In the field of corrosion protection, the research of environmentally friendly coating processes is one of the research topics. The use of gaseous atmospheric plasma, especially dielectric barrier discharge (DBD) plasma is an interesting way to rapidly form a thin protective coating. The aim of this work is to characterize the electrochemical behaviour of a SiO x C y N z film, formed from different organosilicon precursors, in neutral corrosive environment on copper. The film morphology and composition were determined by transmission electron microscopy (TEM) observations and X-ray photoelectron spectroscopy (XPS). The electrochemical behaviour of the different treated copper was studied by stationary techniques and electrochemical impedance spectroscopy (EIS). With the same plasma parameter, the kind of organosilicon precursor determines the chemical stability of the coatings in water, then their protective properties. When the SiO 2-like structure contains a low carbon level, the SiO x C y N z films present a good stability in water, and acts clearly as an O 2 barrier membrane.
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