Abstract
The electrochemical behavior of p-Si in HF solution by modification of the silicon electrolyte interface is studied. For this purpose, the samples were coated with titanium carbide (TiC) deposited by RF pulverization of titanium under methane/argon atmosphere. The current–potential characteristics of TiC-coated electrodes in 5% HF are similar to the ones obtained with silicon. The scanning electron microscopy observation of the Si/CH x surface structures shows that the coating is stable in HF environment but it can be destroyed upon flowing of an anodic current. The results presented suggest that a TiC film layer can be used as a potential tool for low-thickness masking and patterning. In addition, a promising class of optical filters is introduced, based on a p-Si/porous silicon/TiC.
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