Abstract
A brief description of the principles of the Scanning Tunneling Microscopy (STM) is presented, including the basic theory, experimental mounting and operation conditions. Applications of the new technique to characterize at the nm scale the topography of polycrystalline, single crystal, and amorphous metal surfaces are presented. Attention is paid to preferentially oriented and highly-dispersed metals of particular interest in electrochemistry. Surface imaging of graphite and semiconductors at the atomic scale are shown. The applications of STM to the study of surface configuration of different adsorbates is also included. The recent development of STM mounted in the electrochemical cell as an in situ technique to determine the topography of metal electrodes immersed in the electrolyte solution is described. The scanning tunneling spectroscopies are also briefly considered. Finally, the present state-of-the-art and the perspectives of STM in electrochemistry are discussed.
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