Abstract
Current rapid development of big data, Internet of Things, and artificial intelligence require exponentially higher data storage capacity. The memristor technology, which stores data by controlling resistance states, demonstrates great prospects in resistive random‐access memory (RRAM), synapse construction, and neuromorphic computing. However, traditional memristor devices can only store 1‐bit of data by tuning two separate resistance states, which limits their storage density. Herein, a water‐coupled Ag/TiO2_few‐layer graphene_TiO2/Al memristor is developed as a multibit data storage system. The high and low resistance state ratio (HRS/LRS) increases from 5 to 44 when water is coupled in the device. An electrocatalytic hydrolysis‐modulated resistive switching mechanism is proposed for the physical phenomenon. Herein, not only a multilevel per cell (MLC) storage device is developed, but also a novel electrocatalysis coupling mechanism for memristor technology is provided.
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