Abstract
Polymeric films with anthraquinone groups (PAQ) were coated on n- and p-type Si semiconductors and the electrocatalytic reduction of O 2 in aprotic solution was investigated. Comparisons were made between the effects of anthraquinone (AQ) in solution and in a polymer film, to a bare semiconductor. PAQ coated electrodes exhibited superior catalytic stability for the reduction of O 2 to that obtained with AQ in solution. Cyclic voltammetry showed that the n-Si/PAQ interface changed from ohmic to rectifying after several sweeps in potential. The evolution of an oxide film, and associated interface states, on the silicon surface is postulated as the chemical basis for these changes.
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