Abstract
In order to understand the catalytic activity for the oxygen reduction reaction (ORR) of Ta compound film, a thin film catalyst using TaC or TaN target by magnetron sputtering under Ar+N2+O2 mixture was prepared and investigated the effects of the target material, the temperature of base material and gas composition on the catalytic activity for the ORR. Thin films of Ta compound prepared from TaC target was better than that from TaN target for the ORR. The optimum preparation condition of TaCxNyOz was in the oxygen partial pressure range from 10 to 15 mPa with a certain partial pressure of N2. TaCxNyOz of high ORR activity was mainly consisted of TaON. The main difference between TaCxNyOz and TaOxNy prepared from TaN target was the carbon content on the surface.
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