Abstract
The electroabsorption spectra of plasma deposited and chemical vapor deposited amorphous silicon films have been studied in comparison with their absorption. In all cases a peak with 350–400 meV halfwidth is observed similar to the results on chalcogenide glasses. The peak occurs at moderate values of the absorption constant near 10 4 cm −1 and follows the shift of the absorption edge with variation of the deposition temperature. No response has been obtained in the low absorption region below 1.5 eV. The field modulated reflectance which has been calculated from the electroabsorption data is about two orders of magnitude smaller than the electroabsorption signal. The electroabsorption spectrum is interpreted as resulting from the influence of the external field on the localized states only.
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