Electroabsorption properties of InGaAs/InAlAs multiple quantum well structures at 1.5 /spl mu/m

Abstract

The electroabsorption properties of InGaAs/InAlAs MQW structures are characterised in terms of /spl Delta//spl alpha/, /spl Delta//spl alpha//F and /spl Delta//spl alpha///spl alpha/ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> , where /spl Delta//spl alpha/ is the electroabsorption, /spl alpha/ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> is the residual absorption coefficient under zero bias, and F is the applied electric field. The limitations of these structures for 1.5 μm modulators are primarily due to the relatively small /spl Delta//spl alpha//F values as a result of the small well width. The results are compared with the literature.