Abstract
Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) fabricated by low-temperature processes on a flexible substrate can easily be degraded by mechanical deformation. Furthermore, lower performance in terms of the initial characteristics and reliability levels compared to those fabricated on glass substrates with relatively high heat treatments is inevitable. To solve these problems, a local electro-thermal annealing (ETA) method was applied to flexible a-IGZO TFTs processed at low temperature to enhance the inferior initial characteristics and reliability under a bending state. The enhancement of the characteristics and reliability by ETA can be attributed to the reduction of defects related to the oxygen through a localized Joule heat treatment with an extremely short duration (~1 ms). In addition, the effectiveness of ETA to recovery from bending stress even under harsh cyclic bending operation (strain condition of 0.833%) is verified.
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