Abstract
The performance of oxide-confined vertical-cavity lasers (VCLs) can be severely limited by current leakage and self-heating. This paper investigates electrical and thermal effects of lateral oxidation on wafer-bonded 1.55 μm VCLs. Measurements are combined with two-dimensional finite-element simulations to analyze internal device physics. Charged defects at the p-side fused interface are found to increase the threshold voltage as well as lateral current spreading. An optimum oxide aperture for minimum device heating is calculated. Loss reductions are predicted to lead to a minimization of self-heating with small apertures.
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