Abstract
By employing vapor-phase transport method, ZnO microrods are fabricated and directly assembled on p-GaN substrate to form a heterostructural microlaser array, which avoids of the relatively complicated etching process comparing previous work. Under applied forward bias, whispering gallery mode ZnO ultraviolet lasing is obtained from the as-fabricated heterostructural microlaser array. The device's electroluminescence originates from three distinct electron-hole recombination processes in the heterojunction interface, and whispering gallery mode ultraviolet lasing is obtained when the applied voltage is beyond the lasing threshold. This work may present a significant step towards future fabrication of a facile technique for micro/nanolasers.
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