Electro-plasmonic Modal Power Shifting in Metal/Insulator/Semiconductor Structure Tailored as a CMOS-compatible Plasmonic Waveguide

Abstract

In this paper, we have proposed a new npn-type design of a CMOS-compatible metal/semiconductor/insulator/metal (MSIM) plasmonic structure, to be used as a different geometry to manipulate, guide, and route surface plasmon polaritons (SPPs). Relying on the sub-wavelength diffraction-free plasmonic technology, the proposed ultra-compact structure has only a 20-nm-thick dynamic region accompanied by 1 to 2-nm thin-film HfO2 gate insulator as a distinct carrier barrier to serve both electronic and optic characteristics. The device is tailored as a mixture of MOSFET and BJT transistors in which to attain electro-plasmonic tuning goals; the npn-type structure uses rather large electron concentration densities accumulated near the oxide/semiconductor interface under 7.6-v switching voltage. This fact leads to adequate modal index variation of a doped Si, dynamic region by which routing of plasmonic traveling waves at a fiber communications wavelength of λ = 1550 nm will be possible. To investigate the optical and electronic behaviors of design, we have launched electromagnetic simulations solved on the rigorous finite element method (FEM) and also quantum mechanical (QM) included carrier transport simulations, respectively. To be reported, the estimated plasmonic modal power movement from the left-side-half-Si-core to the right-side-half-Si-core can reach to percentages of even 23.7%. This MSIM electro-plasmonic-addressed structure can be dramatically used to design specific-application routing/switching devices.