Abstract
Electro-optical modulating multistack device based on the CMOS-compatible technology of amorphous silicon
Highlights
The optoelectronic properties of hydrogenated amorphous silicon, α-Si:H, and related materials have been exploited for decades almost exclusively for the fabrication of lowcost large-area photovoltaic devices
Of the waveguide and the modulated light emerging from the chip was collected and collimated by an objective and detected by an InGaAs photodiode
The average effective absorption coefficient variation ∆αeff induced in the core waveguide is 0.35 cm−1, 0.65 cm−1 and 0.75 cm−1 respectively at 10 V, 20 V and 30 V biases, corresponding to an electric field of 0.13 MV/cm, 0.26 MV/cm and 0.39 MV/cm across the 40 nm thin insulating α-SiCN layers
Summary
The optoelectronic properties of hydrogenated amorphous silicon, α-Si:H, and related materials have been exploited for decades almost exclusively for the fabrication of lowcost large-area photovoltaic devices. Thanks to their unique characteristics of transparency at the infrared wavelengths [1], refractive index tunability and good technological compatibility with all microelectronic process [2], many α-Si:H-based photonic devices, such as LEDs [3], photodetectors [4] and lightwave guiding [2], have been fabricated successfully. A λ = 1.55 μm radiation propagating in a planar waveguide has been modulated in amplitude by a visible wide spectrum light sources [5] In such cases the interaction of amorphous silicon with an infrared radiation strictly depends on the density of localized states available in the pseudogap and their respective occupancy state. This is a peculiarity of amorphous semiconductors which makes a substantial difference in the optoelectronic applications with respect to the homologous crystalline counterparts
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