Abstract
Silicon carbide (SiC) is a promising candidate as a material platform for photonic quantum technologies due to the coexistence of quantum emitters and a non-centrosymmetric crystal structure. The realization of a single-photon detector was hampered from both the poor surface quality and the difficulties in micromachining this material. In this work, we realized superconducting nanowire single-photon detectors (SNSPDs) integrated on top of high-quality 3C SiC whose electro-optical characterization was performed thanks to a novel alignment method. We demonstrate that SNSPDs with high internal efficiency can be fabricated which is a fundamental building block toward the realization of complex architectures in this platform.
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