Abstract
For the first time, we present an electro-optic slot waveguide phase modulator on the InP membrane on Silicon (IMOS) platform. Low-frequency characterization of this modulator shows that it can achieve a $ {V}_{ {\pi }} {L}_{ {\pi }}$ product as low as 4.5 V.mm and an extinction ratio equal to 10.6 dB. The 3-dB optical bandwidth of this modulator is measured to be 10.5 GHz. Here, working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance and prospects of this modulator are presented.
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