Abstract
Nickel oxide (NiO) thin film is grown via pulse laser deposition (PLD) technique and it is trapped in between conducting graphene films deposited through the same technique. Epitaxial crystalline growth of both NiO and graphene films are confirmed from X-ray diffraction studies. Raman studies propose creation of pure graphene film with acceptable defects. Electrical transport of the NiO film reveal resistance switching properties for an wide range of temperature which is useful for resistive random access memory (RRAM) and electric-switch. Besides electrical switching, the transport properties of the NiO film depict a systematic response in influence of magnetic field. Resistance of the NiO film changed significantly with external magnetic field which makes the system useful as a magnetic-switch.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
