Abstract
Ferroelectric resistive switching has recently attracted considerable attention as a promising candidate for next-generation non-volatile memory. In this work, we report an electro and photon double-driven bipolar resistive switching behavior in Pt /Bi0.9Eu0.1FeO3 (BEFO) /Nb-doped SrTiO3 (NSTO) heterostructures prepared via pulsed laser deposition. In addition to the polarization-based control of the resistive memory, a switchable photovoltaic effect is observed that can be used to detect the polarization direction non-destructively. Significantly, the electric field-modulated interfacial barrier can be further affected by photon-generated carriers. This phenomenon is attributed to the barrier modulation in the Pt /BEFO and BEFO /NSTO interfaces by electric field and photon excitation. These results indicate the feasibility of non-volatile and non-destructive readout from ferroelectric memory.
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