Abstract
Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO2/Si MOS capacitor where the interface monolayer (ML) TiO2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (Dit). Consequently, we propose, a multi-stacked amorphous HfO2/1-ML TiO2/SiO2 IDM structure to realize a low Dit and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.
Highlights
Emerging memory devices with various mechanisms have been investigated in an effort to replace Si-based NAND flash memories, which are the most common type of digital storage device, e.g., resistive random access memories (ReRAMs), phase change memories (PCMs), ferroelectric tunnel junctions (FTJs), and ferroelectric field-effect transistors (FeFETs)[1,2,3,4,5,6,7,8]
Ferroelectric HfO2 is a promising material in terms of Si material compatibility because Hf-based gate oxides are employed in advanced Si complementary metal-oxide semiconductor (MOS) devices[7,8]
A flash-type memory operation of HfO2-based FeFET arrays fabricated with an advanced Si-CMOS platform has been demonstrated[8]
Summary
Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. The endurance characteristics observed by alternately applying positive and negative bias pulses show good cyclic switching of 105 and a large current difference of about 105 This memory performance has yet to reach a level to be competitive with advanced HfO2 FeFET and two-terminal resistance change devices[3,4,5,6,7,8,48,49]. The concept of an IDM memory is proposed and demonstrated using HfO2-based gate stacks of Si MOS devices In this demonstration, the 1-ML TiO2 modulator inserted at HfO2/Si and HfO2/SiO2 interfaces plays a major role. The electrical characteristics of multi-stacked HfO2/1-ML TiO2/SiO2 IDM MOS capacitors are investigated in detail because this IDM structure is preferable for Si-FET-based flash memory devices. After fabricating the multi-stacked IDM FET device, its switching operation and pulse-induced current change are presented
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