Abstract
The influence is investigated of a dc (electric) field F perpendicular to a strong uniform static magnetic field H on the absorption coefficient of a semiconductor for high-frequency electromagnetic waves polarized along the electric field. The absorption coefficient for some (e.g., phonon-assisted) cyclotron resonances is predicted to exhibit a strong, almost exponential increase by orders of magnitude with increasing F up to a relatively weak F c , the upper limit of the range in which the considered absorption mechanism holds true. The predicted effect is suggested to be observable in typical semiconductors at realistic electric and strong magnetic fields and low temperatures.
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