Abstract
The magnetic anisotropy in ferromagnetic/ferroelectric Ni/(011)-Pb(Mg2/3Nb1/3)0.7Ti0.3O3 (Ni/PMN-0.3PT) was studied by angular dependence of the anisotropic magnetoresistance measurements. It was observed that the magnetic anisotropy seems unidirectional, which is attributed to the domain wall propagation and domain nucleation under lower magnetic fields (smaller than the coercive magnetic field, ∼35 Oe). Moreover, the unidirectional-like anisotropy rotated from ∼10° to ∼50° by 4 kV/cm. With increasing in-plane rotating magnetic field, the unidirectional-like anisotropy changed to uniaxial magnetic anisotropy, which rotated from 10° to 24° by the coactions of 40 Oe and 4 kV/cm. The magnetic anisotropy modulated by magnetic and electric fields can be understood from the viewpoint of balancing the Zeeman energy, magnetoelastic anisotropic energy, and uniaxial magnetic anisotropic energy. These results indicate that the approach of electric field-controlled magnetic anisotropy and magnetization rotation enables the possibility of an electrically writable memory bit that can be encoded by magnetoresistance.
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