Abstract
Electrical tuning of high refractive index-contrast photonic bandgap (PBG) structures is required for a majority of PBG applications, particularly for integrated optics. When the host material is a semiconductor with poor electro-optical properties, tuning can be achieved by infiltrating the structure with an active optical material. In this paper we analyze the switching of electro-optic material in such structures, and suggest design rules to help achieve electrical tuning. In particular, a design concept that eliminates the electric field screening effects is proposed. The developed rules and concepts are demonstrated by the electrical tuning of liquid crystals inside two-dimensional porous silicon PBG structures. This approach can be generalized to different combinations of semiconductor PBG structures and active optical materials
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