Abstract
Electrically pumped random lasing based on an Au-ZnO nanowire Schottky junction diode is demonstrated. The device exhibits typical Schottky diode current-voltage characteristics with a turn-on voltage of 0.7 V. Electroluminescence characterization shows good random lasing behavior and the output power is about 67 nW at a drive current of 100 mA. Excitonic recombination is responsible for lasing generation. Zn plasma is only observed under high applied bias, which can be distinguished from the random lasing spectral features near 380 nm. The laser diode based on the Schottky junction provides an alternative approach towards semiconductor random lasers.
Highlights
We demonstrate an electrically pumped random laser based on the Au–ZnO nanowire Schottky diode, which is different from all reported device structures
The nanowires are not totally vertically aligned, rather slightly tilted 5–10 degrees, which may be due to the roughness of the seed layer surface
Good random lasing behavior is demonstrated, indicating that the leakage hole current flowing in a unipolar Schottky junction is sufficient to help trigger the excitonic process in ZnO nanowires, and initiate and maintain excitonic lasing
Summary
ZnO is a direct band gap material with large exciton binding energy of 60 meV, i.e. more than twice the thermal energy at room temperature, which makes it extremely promising for the development of room temperature (RT) ultraviolet (UV) lasers.[1,2,3,4] a random laser has attracted much attention for its great application potential in speckle-free imaging, sensing, and medical diagnostics.[5,6,7,8,9,10] A great deal of effort on optically pumped random lasers[11,12,13] has significantly enriched the knowledge of the field, and the development of portable random lasers by electrical pumping is essential from the application standpoint. Pumped random lasing based on an Au–ZnO nanowire Schottky junction diode is demonstrated.
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