Electrically Driven Single Quantum Dot Emitter Operating at Room Temperature

Abstract

AbstractWe present both optically and electrically driven room temperature emission from single CdSe quantum dots, realized by self-organized epitaxial growth. A structure design that embeds the CdSe quantum dots into ZnSSe/MgS barriers results in high carrier confinement and exceptionally large quantum efficiencies at room temperature. Microphotoluminescence with a spatial resolution of 200 nm exhibits single dot emission that remains visible up to 300 K. When integrating these quantum dots into p-i-n diode structures, an electrically driven single dot emitter with pronounced room temperature emission is realized. The linewidth of the single dot emission increases with temperature due to exciton-phonon interaction and reaches 26 meV at 300 K. This value is only slightly larger than the biexcitonic binding energy, opening a way to solid state single photon emitters operating at elevated temperatures.KeywordsSingle Photon SourceRoom Temperature EmissionBiexciton Binding EnergySynchroscan Streak CameraThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.