Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Sinanowires

Abstract

Electrically driven lasing was demonstrated in light-emitting devices composed of n-ZnOand p-Si nanowires (NWs). The ZnO NWs were synthesized by thermal chemical vapordeposition and the Si NWs were formed by crystallographic wet etching of aSi wafer. The p–n heterojunction devices were constructed using the NWs bythe direct transfer and dielectrophoresis methods. At an excitation current of2 µA, the electroluminescence spectrum showed lasing behavior, and this phenomenon wasexplained by the ZnO-nanostructure-related cavity property.