Abstract
In this work we addressed a key challenge in realizing multiferroics-based reconfigurable magnetic devices, which is the ability to switch between distinct collective magnetic states in a reversible and stable manner with a control voltage. Three possible non-volatile switching mechanisms have been demonstrated, arising from the nature of the domain states in pervoskite PZN-PT crystal that the ferroelectric polarization reversal is partially coupled to the ferroelastic strain. Electric impulse non-volatile control of magnetic anisotropy in FeGaB/PZN-PT and domain distribution of FeGaB during the ferroelectric switching have been observed, which agrees very well with simulation results. These approaches provide a platform for realizing electric impulse non-volatile tuning of the order parameters that are coupled to the lattice strain in thin-film heterostructures, showing great potentials in achieving reconfigurable, compact, light-weight and ultra-low-power electronics. Thin films that switch magnetic states with electric impulses and strain effects have potential for ultra-low power spintronic devices. The coupled magnetic, ferroelectric, and ferroelastic properties of multiferroic materials make them attractive candidates for future non-volatile memory systems. Ming Liu from Xi’an Jiaotong University in China and an international team have now discovered three different ways to manipulate magnetic domains in a multiferroic, multilayered device through ferroelectrical partially-coupled ferroelastic domain switching. Depositing an iron–gallium–boron thin film on top of a piezoelectric substrate produced two stable and reversible lattice strain states accessible through a control voltage. Electric impulses could also trigger phase transitions in the piezoelectric that in turn, switched magnetic states in the mechanically coupled iron–gallium–boron layer. Computational modelling helped visualize the mechanisms behind the electrically-controlled tuning exhibited by this prototype. (a–c) Reciprocal space maps about (022) reflections of PZN-PT (011) under various poling states, exhibiting various ferroelastic strain states. (d) Electric impulse-induced non-volatile tuning of magnetic anisotropy between the distinct strain states A and B due to the ferroelectric partially coupled ferroelastic domain switching. (e) Hysteresis loops of magnetic resonance fields of FeGaB as a function of the electric field applied on PZN-PT (011), arising from the electric field-induced ferroelectric phase transition from rhombohedral to orthogonal (R–O).
Highlights
One of the central challenges in realizing non-volatile magnetic memory devices lies in finding an energy-efficient way to switch between distinct collective magnetic states in a reversible and stable manner with a control voltage.1–10 Multiferroic heterostructures, simultaneously exhibiting ferromagnetism, ferroelectricity and ferroelasticity, have attracted great interest due to the strong strainmediated magnetoelectric (ME) coupling and shown promising applications for tunable magnetic devices.11–29 More interestingly, in these structures, a single control parameter of voltage is used to induce a lattice strain through the converse piezoelectric effect in the ferroelectric phase, which in turn tailors the magnetic properties in the mechanically coupled magnetic phase through the magnetoelastic effect.25,30–41 devices made of such heterostructures are ultrafast, compact, quiet, energy efficient and susceptible to be integrated into electronic circuits
We reveal that the electric impulse-induced ferroelectric/ferroelastic domain switching and structural phase transition allows the production of two stable and reversible lattice strain states and thereby lead to a robust tuning of the distinct magnetic states
We reveal the changes in local magnetic domain configurations beneath the changes of macroscopic magnetic states using phase-field modeling
Summary
One of the central challenges in realizing non-volatile magnetic memory devices lies in finding an energy-efficient way to switch between distinct collective magnetic states in a reversible and stable manner with a control voltage.1–10 Multiferroic heterostructures, simultaneously exhibiting ferromagnetism, ferroelectricity and ferroelasticity, have attracted great interest due to the strong strainmediated magnetoelectric (ME) coupling and shown promising applications for tunable magnetic devices.11–29 More interestingly, in these structures, a single control parameter of voltage is used to induce a lattice strain through the converse piezoelectric effect in the ferroelectric phase, which in turn tailors the magnetic properties in the mechanically coupled magnetic phase through the magnetoelastic effect.25,30–41 devices made of such heterostructures are ultrafast, compact, quiet, energy efficient and susceptible to be integrated into electronic circuits. We reveal that the electric impulse-induced ferroelectric/ferroelastic domain switching and structural phase transition allows the production of two stable and reversible lattice strain states and thereby lead to a robust tuning of the distinct magnetic states.
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